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Deep levels in low temperature GaAs probed by field effect deep level transient spectroscopy

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2 Author(s)
Halder, N.C. ; Department of Physics, University of South Florida, Tampa, Florida 33620 ; Goodman, T.

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Low temperature (LT) GaAs grown on semi-insulating GaAs by molecular beam epitaxy has been investigated by field effect deep level transient spectroscopy at several reverse bias fields ranging from -1×105 to -4×105V/cm. The activation energy, capture cross section, and electron–phonon coupling parameter all have been found to be modulated by the applied field. The theories of the Schottky effect and the electron–phonon coupling effect have been considered to interpret the electron conduction mechanisms in LT GaAs. © 1999 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:17 ,  Issue: 1 )