Cart (Loading....) | Create Account
Close category search window

Mask membrane deflection caused by mask tilt during the wafer stepping motion in x-ray steppers

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

1 Author(s)
Uchida, Norio ; Mechanical Systems Research Laboratories, Research and Development Center, Toshiba Corporation, 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 210-8582, Japan

Your organization might have access to this article on the publisher's site. To check, click on this link: 

A new analysis method for deflection of the mask membrane during the wafer stepping motion in x-ray steppers has been developed. The deflection is caused by the wedge action of the gas film between the mask and the wafer if the mask tilts slightly relative to the plane on which the wafer is traveling. The deflection is not only detrimental to the throughput of x-ray steppers, it may also damage the mask membrane. Lees’ difference approximation method is applied to Reynolds’ equation for the gas film and the equation of motion for the membrane. The results calculated show good agreement with the experimental results (Ref. 1) obtained by Canon Inc. (1) The larger the tilt angle of the mask and the narrower the mask-to-wafer gap, the larger the deflection of the mask membrane. (2) In order to maintain the deflection of the membrane within 1 μm in the calculated mask, the tilt angle of the mask must be within 20 μrad under conditions of a 15 μm mask-to-wafer gap, a 30 mm stepping distance, and a wafer velocity of 100 mm/s. If the stepping distance becomes longer, the tilt angle must be more strictly controlled. © 1998 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:16 ,  Issue: 6 )

Date of Publication:

Nov 1998

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.