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Submicrometer transmission mask fabricated by low-temperature SF6/O2 reactive ion etching and focused ion beam

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5 Author(s)
Sheng, H.-Y. ; National Research Institute For Metals, Tsukuba-shi, Ibaraki 305-0047, Japan ; Fujita, D. ; Ohgi, T. ; Okamoto, H.
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.590330 

A novel technique is presented to fabricate a silicon submicrometer transmission mask for nanofabrication. One of the applications of the mask is to fabricate a single electron transistor using an ultrahigh vacuum scanning tunneling microscope. The mask fabrication processes involve KOH wet etching, electron beam lithography, low-temperature SF6/O2 plasma-assisted reactive ion etching and focused ion beam techniques. Using this method, we fabricated masks with pattern sizes of 2.5×2.5 mm2 and opaque parts of submicrometer scale. After the evaporation, by using the mask a submicrometer gap on the metal pattern can be obtained. © 1998 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:16 ,  Issue: 6 )

Date of Publication:

Nov 1998

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