By Topic

Elimination of gate oxide damage during electron cyclotron resonance plasma etching of the tungsten polycide gate structure (WSi/poly-Si)

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Chen, Rui ; Fujitsu Microelectronics, Inc., Gresham, Oregon and Department of Chemical Engineering, Center for Advanced Materials Research, Oregon State University, Corvallis, Oregon 97331-2702 ; Koretsky, M.D.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.590295 

Oxide damage during the over etch step of a polycide gate structure is studied. Seven process parameters of the electron cyclotron resonance (ECR) plasma etching system are systematically investigated. These parameters include: rf power, microwave power, main coil and subcoil currents, Cl2 and O2 gas flow rate, and pressure. The results show that damage depends strongly on only three parameters: rf power, subcoil current, and O2 flow rate. As a result, a highly anisotropic, damage and poly-Si residue free etch of the polycide gate structure, with a high etch rate, has been achieved. These etch characteristics are critical for manufacturing the next generation of IC products. © 1998 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:16 ,  Issue: 5 )