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Elimination of gate oxide damage during electron cyclotron resonance plasma etching of the tungsten polycide gate structure (WSi/poly-Si)

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2 Author(s)
Chen, Rui ; Fujitsu Microelectronics, Inc., Gresham, Oregon and Department of Chemical Engineering, Center for Advanced Materials Research, Oregon State University, Corvallis, Oregon 97331-2702 ; Koretsky, M.D.

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Oxide damage during the over etch step of a polycide gate structure is studied. Seven process parameters of the electron cyclotron resonance (ECR) plasma etching system are systematically investigated. These parameters include: rf power, microwave power, main coil and subcoil currents, Cl2 and O2 gas flow rate, and pressure. The results show that damage depends strongly on only three parameters: rf power, subcoil current, and O2 flow rate. As a result, a highly anisotropic, damage and poly-Si residue free etch of the polycide gate structure, with a high etch rate, has been achieved. These etch characteristics are critical for manufacturing the next generation of IC products. © 1998 American Vacuum Society.

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Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:16 ,  Issue: 5 )