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Investigation of growth mode behavior and surface morphology evolution of metalorganic vapor phase epitaxy grown ZnTe layers on (001) GaAs

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5 Author(s)
Longo, M. ; Istituto Nazionale per la Fisica della Materia (INFM) and Dipartimento di Scienza dei Materiali, University of Lecce, Via Arnesano, I-73100 Lecce, Italy ; Lovergine, N. ; Mancini, A.M. ; Leo, G.
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A systematic investigation on the mechanisms of nucleation and surface morphology evolution was performed on ZnTe epilayers, deposited on chemically etched GaAs(001) by metalorganic vapor phase epitaxy. A 2D–3D growth mode transition was observed at around two ZnTe equivalent monolyers (ML), which was ascribed to a Stransky–Krastanow growth mode. The 3D growth behavior was correlated to the development of {n11}-type planes, leading to a surface ridging effect along the [11¯0] direction for 4000-ML-thick ZnTe epilayers. The use of a solid-on- solid kinetic roughening model allowed the identification of a mechanism that limits the self- organization of ZnTe nanosized islands, namely, the high density of kink sites found in non- atomically flat GaAs substrates. © 1998 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:16 ,  Issue: 5 )

Date of Publication:

Sep 1998

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