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Study of reaction and electrical properties at Ti/SiGe/Si(100) contacts for ultralarge scale integrated applications

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2 Author(s)
Zaima, Shigeaki ; Center for Cooperative Research in Advanced Science and Technology, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan ; Yasuda, Yukio

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Solid-phase reaction, Schottky barrier heights and contact resistivities at the interface of Ti/Si0.8Ge0.2/Si(100) systems have been investigated. At annealing temperatures below 300 °C, Ti atoms preferentially react with Si atoms. Ge atoms start to react with Ti above 400 °C and C54–Ti(Si1-yGey)2 with a fraction of y=0.12 is formed by annealing at 650 °C. The annealing behavior of Schottky barrier heights suggests that the Ge composition of SiGe layers at the interface is Si-rich, which is consistent with the results on the interfacial reaction. For both n- and p-SiGe, the Schottky barrier heights lower than those of Ti/Si(100) are obtained at 650 °C, which is considered to be related to the reaction product such as C54–Ti(Si1-yGey)2. The contact resistivities smaller than those expected from the Schottky barrier heights are obtained for p+-SiGe at 580 °C. The sheet resistance of Ti/Si0.8Ge0.2/Si(100) and Ti/Ge(100) systems decreases at annealing temperatures above 550 °C and the values are as small as that of C54–TiSi2. © 1998 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:16 ,  Issue: 5 )

Date of Publication:

Sep 1998

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