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Dynamic Monte Carlo simulation for depth profiling by ion-sputter etching: Application to the AlAs/GaAs multilayered system

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2 Author(s)
Lee, Hyung-Ik ; Department of Applied Physics, Faculty of Engineering, Osaka University, Suita, Osaka 565, Japan ; Shimizu, Ryuichi

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.590203 

We present a dynamical simulation approach by Monte Carlo calculation to describe atomic mixing phenomena in depth profiling of multilayered systems. This approach is based on the binary encounter model, taking into account (1) generation of both the interstitial atoms and vacancies and (2) annihilation of the vacancies. The results indicate that the simulation describes very well the depth profiles of AlAs/GaAs multilayered systems obtained by Auger electron spectroscopy. It predicts the existence of preferential sputtering of Al in the AlAs layer, where the Auger intensity of the As (MVV—32 eV) in the AlAs layer is about 1.2 times larger than that of the GaAs layer for 0.5 keV Ar+ sputtering. © 1998 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:16 ,  Issue: 4 )