Cart (Loading....) | Create Account
Close category search window

Nucleation and growth of GaN layers on GaAs, Si, and SiC substrates

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Ploog, Klaus H. ; Paul Drude Institute for Solid State Electronics, D-10117 Berlin, Germany ; Brandt, Oliver ; Yang, Hui ; Yang, Bin
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

We summarize our results on plasma-assisted molecular beam epitaxy of cubic GaN on GaAs(001) and on Si(001) and of hexagonal GaN on 6H-SiC(0001) with emphasis on the nucleation process. A two-step growth sequence must be used to optimize and control the nucleation and the subsequent growth independently. While a perfect epitaxial orientation exists for GaN-on-GaAs due to the coincidence lattice relationship of the two constituents. The same effect is impeded for GaN-on-Si by the growth of SixNy inclusions at the interface which act as nucleation cores for the formation of the hexagonal GaN phase. A suitable template, such as a thin GaAs or SiC insertion layer, avoids formation of the SixNy inclusions. Finally, growth of hexagonal GaN-on-6H-SiC without any buffer layer requires very careful adjustment of the N-to-Ga flux ratio and the substrate temperature, independently for the nucleation stage and for the subsequent layer-by-layer growth. The structural perfection and the optical properties of the resulting 1 μm thick GaN films then reach state-of-the-art quality even without a buffer template.© 1998 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:16 ,  Issue: 4 )

Date of Publication:

Jul 1998

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.