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Nucleation and growth of GaN layers on GaAs, Si, and SiC substrates

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5 Author(s)
Ploog, Klaus H. ; Paul Drude Institute for Solid State Electronics, D-10117 Berlin, Germany ; Brandt, Oliver ; Yang, Hui ; Yang, Bin
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.590153 

We summarize our results on plasma-assisted molecular beam epitaxy of cubic GaN on GaAs(001) and on Si(001) and of hexagonal GaN on 6H-SiC(0001) with emphasis on the nucleation process. A two-step growth sequence must be used to optimize and control the nucleation and the subsequent growth independently. While a perfect epitaxial orientation exists for GaN-on-GaAs due to the coincidence lattice relationship of the two constituents. The same effect is impeded for GaN-on-Si by the growth of SixNy inclusions at the interface which act as nucleation cores for the formation of the hexagonal GaN phase. A suitable template, such as a thin GaAs or SiC insertion layer, avoids formation of the SixNy inclusions. Finally, growth of hexagonal GaN-on-6H-SiC without any buffer layer requires very careful adjustment of the N-to-Ga flux ratio and the substrate temperature, independently for the nucleation stage and for the subsequent layer-by-layer growth. The structural perfection and the optical properties of the resulting 1 μm thick GaN films then reach state-of-the-art quality even without a buffer template.© 1998 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:16 ,  Issue: 4 )

Date of Publication:

Jul 1998

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