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Magneto-transport studies of Si/SiGe and Si/SiGeC quantum well structures grown by molecular beam epitaxy at low temperatures

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7 Author(s)
Grutzmacher, D. ; Micro- and Nanostructures Laboratory, Paul-Scherrer-Institute, CH-5232 Villigen-PSI, Switzerland ; Hartmann, R. ; Schnappauf, P. ; Gennser, U.
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The magneto-transport properties of SiGe and SiGeC quantum well structures were studied in relation to their dependence on the growth temperature, Ge and C concentration, well width, and spacer width. It is found that interface roughness and charged impurities are the main origins for scattering in SiGe and SiGeC two-dimensional hole gas (2DHG) structures. Rapid thermal annealing subsequent to growth improves the mobility in SiGeC 2DHG by a factor of 2, whereas only a 20% increase is observed for SiGe 2DHG. At 1.6 K a mobility of 1930 cm2/V s for Si0.81Ge0.185C0.05 and 6900 cm2/V s for Si0.85Ge0.15 channels was deduced from Shubnikov–de Haas oscillations measured up to 8 T. The effective mass determined for holes in the SiGeC alloy is 0.21±0.02. B δ-doped Si layers were used to determine the B diffusion in the temperature range from 700 to 850 °C by intersubband absorption spectroscopy. © 1998 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:16 ,  Issue: 3 )

Date of Publication:

May 1998

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