Cart (Loading....) | Create Account
Close category search window

Magneto-transport studies of Si/SiGe and Si/SiGeC quantum well structures grown by molecular beam epitaxy at low temperatures

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Grutzmacher, D. ; Micro- and Nanostructures Laboratory, Paul-Scherrer-Institute, CH-5232 Villigen-PSI, Switzerland ; Hartmann, R. ; Schnappauf, P. ; Gennser, U.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

The magneto-transport properties of SiGe and SiGeC quantum well structures were studied in relation to their dependence on the growth temperature, Ge and C concentration, well width, and spacer width. It is found that interface roughness and charged impurities are the main origins for scattering in SiGe and SiGeC two-dimensional hole gas (2DHG) structures. Rapid thermal annealing subsequent to growth improves the mobility in SiGeC 2DHG by a factor of 2, whereas only a 20% increase is observed for SiGe 2DHG. At 1.6 K a mobility of 1930 cm2/V s for Si0.81Ge0.185C0.05 and 6900 cm2/V s for Si0.85Ge0.15 channels was deduced from Shubnikov–de Haas oscillations measured up to 8 T. The effective mass determined for holes in the SiGeC alloy is 0.21±0.02. B δ-doped Si layers were used to determine the B diffusion in the temperature range from 700 to 850 °C by intersubband absorption spectroscopy. © 1998 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:16 ,  Issue: 3 )

Date of Publication:

May 1998

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.