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Germanium-rich SiGe bulk single crystals grown by the vertical Bridgman method and by zone melting

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7 Author(s)
Barz, A. ; Kristallographisches Institut der Universität Freiburg, 79104 Freiburg, Germany ; Dold, P. ; Kerat, U. ; Recha, S.
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.589950 

Silicon–germanium single crystals with a Si content up to 10 at. % have been grown by the vertical Bridgman technique in a monoellipsoid mirror furnace. Single crystal regions up to 50 at. % have been realized by zone melting in a double ellipsoid mirror furnace. The typical high temperature gradients of radiation heated facilities (grad T up to 100 K/cm or even higher, depending on the sample geometry) reduce the occurrence of constitutional supercooling and stabilize the growth interface. Photoluminescence measurements as well as rocking curves and etch pit densities reveal a high crystal quality. Effective segregation coefficients of Al, Ga, In, P, As, and Sb in Ge1-xSix (x≪13 at. %) were determined. © 1998 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:16 ,  Issue: 3 )

Date of Publication:

May 1998

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