Cart (Loading....) | Create Account
Close category search window
 

Scanning tunneling microscopy studies of Ge/Si films on Si(111): From layer by layer to quantum dots

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

8 Author(s)
Motta, N. ; Istituto Nazionale di Fisica della Materia, Dipartimento di Fisica, Università di Roma Tor Vergata, 00133 Roma, Italy ; Sgarlata, A. ; Calarco, R. ; Castro Cal, J.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.589938 

We have followed by scanning tunneling microscopy (STM) the growth of thin Ge films obtained by reactive deposition epitaxy on the Si(111) surface kept at 500 °C. For Ge thickness smaller than 0.45 monolayers (ML), STM images show large 7×7 flat regions without protrusions while at higher coverages flat, triangular 5×5 islands start nucleating. We have followed the evolution of this wetting layer up to its completion and investigated its surface composition at 3 ML by current imaging tunneling spectroscopy measurements. At larger coverages thick Ge islands (quantum dots) start to nucleate according to the Stranski-Krastanov mechanism. We analyze the evolution of the lattice strain both on the wetting layer and on the islands up to 15 ML coverage. A clear expansion of the lattice parameter as a function of the coverage is evidenced both on the islands’ top and on the wetting layer. The luminescence yield measured at 10 K on samples covered by 40 Å of Ge and capped with 10 Å of Si evidences a structure that could be assigned to Ge quantum dots. © 1998 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:16 ,  Issue: 3 )

Date of Publication:

May 1998

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.