By Topic

Device design and circuit modeling issues in ultrahigh vacuum/chemical vapor deposition SiGe heterojunction bipolar transistors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Cressler, J.D. ; Alabama Microelectronics Science and Technology Center, Electrical Engineering Department, 200 Broun Hall, Auburn University, Auburn, Alabama 36849 ; Joseph, A.J. ; Salmon, Stacey L. ; Harame, D.L.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.589977 

We discuss the physical basis, experimental results, and compact circuit modeling issues associated with neutral base recombination, germanium-ramp effects, and high-injection heterojunction barrier effects in graded-base, silicon-germanium heterojunction bipolar transistors. All three phenomena depend strongly on Ge profile shape and temperature, and are unaccounted for in conventional silicon bipolar transistor compact models such as SPICE. © 1998 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:16 ,  Issue: 3 )