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Device design and circuit modeling issues in ultrahigh vacuum/chemical vapor deposition SiGe heterojunction bipolar transistors

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4 Author(s)
Cressler, J.D. ; Alabama Microelectronics Science and Technology Center, Electrical Engineering Department, 200 Broun Hall, Auburn University, Auburn, Alabama 36849 ; Joseph, A.J. ; Salmon, Stacey L. ; Harame, D.L.

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We discuss the physical basis, experimental results, and compact circuit modeling issues associated with neutral base recombination, germanium-ramp effects, and high-injection heterojunction barrier effects in graded-base, silicon-germanium heterojunction bipolar transistors. All three phenomena depend strongly on Ge profile shape and temperature, and are unaccounted for in conventional silicon bipolar transistor compact models such as SPICE. © 1998 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:16 ,  Issue: 3 )