By Topic

Resonant-cavity-enhanced avalanche photodiodes grown by molecular beam epitaxy on InP for detection near 1.55 μm

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Anselm, K.A. ; The University of Texas at Austin, Microelectronics Research Center, Austin, Texas 78712 ; Nie, H. ; Lenox, C. ; Hansing, C.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.589959 

We report on the epitaxial growth, fabrication, and characterization of a resonant-cavity-enhanced separate-absorption and multiplication avalanche photodiode capable of detecting light at 1.55 μm. The device is grown by molecular beam epitaxy with In0.53GaxAl0.47-xAs layers lattice matched to InP. This detector has exhibited a peak external quantum efficiency greater than 70%, a gain of 8, and a dark current of only 50 nA at 90% of breakdown for a 100-μm-diam diode.© 1998 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:16 ,  Issue: 3 )