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Resonant-cavity-enhanced avalanche photodiodes grown by molecular beam epitaxy on InP for detection near 1.55 μm

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6 Author(s)
Anselm, K.A. ; The University of Texas at Austin, Microelectronics Research Center, Austin, Texas 78712 ; Nie, H. ; Lenox, C. ; Hansing, C.
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We report on the epitaxial growth, fabrication, and characterization of a resonant-cavity-enhanced separate-absorption and multiplication avalanche photodiode capable of detecting light at 1.55 μm. The device is grown by molecular beam epitaxy with In0.53GaxAl0.47-xAs layers lattice matched to InP. This detector has exhibited a peak external quantum efficiency greater than 70%, a gain of 8, and a dark current of only 50 nA at 90% of breakdown for a 100-μm-diam diode.© 1998 American Vacuum Society.

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Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:16 ,  Issue: 3 )