Cart (Loading....) | Create Account
Close category search window
 

AlGaAs/GaAs Npn heterojunction bipolar transistors grown on Si (311) by molecular beam epitaxy

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Jurkovic, M.J. ; Department of Electrical Engineering, Columbia University, New York, New York 10027 ; Alperin, J. ; Du, Q. ; Wang, W.I.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.590228 

AlGaAs/GaAs Npn heterojunction bipolar transistors have been grown by molecular beam epitaxy on Si (311) substrates utilizing a GaAs buffer layer as thin as 2 μm and fabricated using a self-aligned base contact process. Reflection high-energy electron diffraction patterns correspond with antiphase domain-free growth. Direct current measurements for a 70×70 μm2 device reveal a small-signal common-emitter current gain of 10 and collector-emitter breakdown of 13 V at a collector current of 1.8 kA/cm2. These results indicate that further optimization in growth technique may render the growth of GaAs-on-Si (311) a viable candidate for application in high-power integration. © 1998 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:16 ,  Issue: 3 )

Date of Publication:

May 1998

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.