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Method of a numerical golden rule calculation for single electron transistor simulations

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2 Author(s)
Nakashima, H. ; Department of Physics, College of Science and Technology, Aoyama Gakuin University, 6-16-1 Chitosedai, Setagaya, Tokyo 157, Japan ; Uozumi, K.

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We present a method of a numerical golden rule calculation for single electron transistor (SET) simulations. This golden rule calculation is, in principle, accurate within the semiclassical framework and is easy to implement. The usefulness of the calculation is demonstrated through the comparison of the current–voltage (I–V) curves for a SET simulated using results of this numerical golden rule calculation with the I–V curve simulated using results of the so-called basic golden rule calculation. © 1998 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:16 ,  Issue: 3 )