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Browse Journals & Magazines > Journal of Vacuum Science & T ...> Volume:16 Issue:3 Help

Method of a numerical golden rule calculation for single electron transistor simulations

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2 Author(s)
Nakashima, H. ; Department of Physics, College of Science and Technology, Aoyama Gakuin University, 6-16-1 Chitosedai, Setagaya, Tokyo 157, Japan ; Uozumi, K.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.589995 

We present a method of a numerical golden rule calculation for single electron transistor (SET) simulations. This golden rule calculation is, in principle, accurate within the semiclassical framework and is easy to implement. The usefulness of the calculation is demonstrated through the comparison of the current–voltage (I–V) curves for a SET simulated using results of this numerical golden rule calculation with the I–V curve simulated using results of the so-called basic golden rule calculation. © 1998 American Vacuum Society.

Published in:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:16 ,  Issue: 3 )

Date of Publication: May 1998

Page(s):
1252 - 1254
ISSN :
1071-1023
Digital Object Identifier :
10.1116/1.589995
Product Type:
Journals & Magazines
Date of Current Version :
18 June 2009
Issue Date :
May 1998

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