Cart (Loading....) | Create Account
Close category search window
 

Effects of heat treatment on the field emission property of amorphous carbon nitride

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Chi, Eung Joon ; Department of Metallurgical Engineering, Yonsei University, Seoul 120-749, Korea ; Shim, Jae Yeob ; Choi, Dong Jun ; Hong Koo Baik

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.589987 

As a coating material for silicon field emitters, amorphous carbon nitride (a-C:N) by helical resonator plasma enhanced chemical vapor deposition has been proposed. Thermal annealing in nitrogen ambient up to 600 °C was carried out to investigate the effects of heat treatment on the field emission. The structural and compositional modifications induced by the annealing were followed by several analytical techniques: Fourier transformation infrared (FTIR) spectroscopy, elastic recoil detection analysis (ERDA), and x-ray photoelectron spectroscopy. FTIR and ERDA analyses indicate that hydrogen loss occurs for annealing temperatures higher than 300 °C. Amorphous-C:N films significantly lowered the turn-on voltage and increased the emission current of the silicon emitters. After annealing at 600 °C, the field emission property was further enhanced presumably due to the efficient conduction through the a-C:N films induced by an increase of the number and/or the size of the graphitic domains. © 1998 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:16 ,  Issue: 3 )

Date of Publication:

May 1998

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.