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Quantification of metal contaminants on GaAs with time-of-flight secondary ion mass spectrometry

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7 Author(s)
Schroder-Oeynhausen, F. ; Physikalisches Institut, Universität Münster, Wilhelm-Klemm-Str. 10, 48149 Münster, Germany ; Burkhardt, B. ; Fladung, T. ; Kotter, F.
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We have shown that small concentrations of metal atoms on UV/ozonized GaAs wafer surfaces can be quantitatively determined by time-of-flight secondary ion mass spectrometry (TOF-SIMS). As standard reference materials, we produced defined submonolayer concentrations of Ca, Mg, Al, Cu, Zn, Si, Ni, Cr, Co, and Fe on the wafer surface by sputter deposition from different single- and multielement targets. The concentrations of the elements with m≫27 u involved in these calculations were verified independently by total reflection x-ray fluorescence spectroscopy. For all ten metals, a linear relation exists between the relative metal signal Me+/71Ga+ and the surface concentration of the metal. By this relation we established TOF-SIMS sensitivity factors for these metals on UV/ozonized GaAs. The detection limits for almost all elements are in the order of 109 atoms/cm2. © 1998 American Vacuum Society.

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Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:16 ,  Issue: 3 )