Cart (Loading....) | Create Account
Close category search window
 

Field emission properties of the polycrystalline diamond film prepared by microwave-assisted plasma chemical vapor deposition

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Kwon, Sang Jik ; Department of Electronics Engineering, Kyung Won University, Bokjung-Dong, Soojung-Gu, Seong-nam City, Kyunggi-Do 151-742, Korea ; Shin, Young Hwa ; Aslam, D.M. ; Jong Duk Lee

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.589888 

Field emission characteristics for the diamond films grown using a gas mixture of different methane concentration in hydrogen were investigated. Measured by using the field emitter with diode structure, the turn-on voltage (field) for emitting 0.1 mA/cm2 current density and the critical electric field for 10 mA/cm2 were 5 V (3.0 V/μm) and 9 V (5.5 V/μm), respectively, for the diamond emitter of a little poor quality grown in 1.5% methane concentration. While, for the good quality diamond emitter grown in 0.5% methane concentration, the values were shown as 10 V (6.1 V/μm) and 21 V (12.7 V/μm), respectively. It is suggested that this phenomenon can be related with the field enhancement effect due to protruding small crystallites and the energy bands induced by internal stress or defects, depending on the film quality. © 1998 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:16 ,  Issue: 2 )

Date of Publication:

Mar 1998

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.