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Browse Journals & Magazines > Journal of Vacuum Science & T ...> Volume:16 Issue:1 Help

Electroluminescence from ZnSTe:Al alloy and investigation of local current distributions by conducting atomic force microscopy

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4 Author(s)
Mao, J.M. ; Department of Electronic Engineering, The Chinese University of Hong Kong, Shatin, New Territories, Hong KongDepartment of Physics, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong ; Sou, I.K. ; Xu, J.B. ; Wilson, I.H.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.589771 

Electroluminescent devices have been fabricated by depositing Al-doped ZnSTe onto GaAs substrates by molecular beam epitaxy. A moderately bright blue-light emission was observed at room temperature. Electroluminescence spectra reveal that light emission is mostly from impact excitation of Te isoelectronic centers in these structures. Surface morphologies and concurrent current images by using conducting atomic force microscopy indicate electrical inhomogeneity in such structures. Nonuniform light emission may be inferred from nonuniform current distributions on the submicrometer scale. © 1998 American Vacuum Society.

Published in:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:16 ,  Issue: 1 )

Date of Publication: Jan 1998

Page(s):
14 - 18
ISSN :
1071-1023
Digital Object Identifier :
10.1116/1.589771
Product Type:
Journals & Magazines
Date of Current Version :
18 June 2009
Issue Date :
Jan 1998

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