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Fabrication and characterization of room temperature silicon single electron memory

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4 Author(s)
Guo, Lingjie ; Department of Electrical Engineering, NanoStructure Laboratory, University of Minnesota, Minneapolis, Minnesota 55455 ; Leobandung, E. ; Zhuang, Lei ; Chou, S.Y.

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A single electron memory was demonstrated in crystalline silicon that has a transistor channel width of ∼10 nm and a nanoscale floating gate of dimension ∼(7 nm × 7 nm × 2 nm), patterned by electron beam lithography, lift-off, and reactive ion etching. Quantized shift in the threshold voltage and self-limited charging process have been observed at room temperature. Analysis has shown that these quantized characteristics are the results of single electron charging effect in the nanoscale floating gate. © 1997 American Vacuum Society.

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Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:15 ,  Issue: 6 )