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A single electron memory was demonstrated in crystalline silicon that has a transistor channel width of ∼10 nm and a nanoscale floating gate of dimension ∼(7 nm × 7 nm × 2 nm), patterned by electron beam lithography, lift-off, and reactive ion etching. Quantized shift in the threshold voltage and self-limited charging process have been observed at room temperature. Analysis has shown that these quantized characteristics are the results of single electron charging effect in the nanoscale floating gate. © 1997 American Vacuum Society.
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures (Volume:15 , Issue: 6 )
Date of Publication: Nov 1997