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Fabrication of 30 nm gate length electrically variable shallow-junction metal–oxide–semiconductor field-effect transistors using a calixarene resist

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5 Author(s)
Sakamoto, T. ; NEC Fundamental Research Laboratories, 34 Miyukigaoka, Tsukuba, Ibaraki 305, Japan ; Kawaura, H. ; Baba, T. ; Fujita, J.
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We have fabricated electrically variable shallow-junction metal–oxide–semiconductor field-effect transistors (EJ-MOSFETs) with an ultrafine gate for the first time. The gate length was reduced to 32 nm by using electron-beam lithography with a calixarene resist, which has an under 10 nm resolution with a sharp pattern edge. Moreover, normal transistor operation of 32 nm gate-length EJ-MOSFETs was confirmed. © 1997 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:15 ,  Issue: 6 )