Cart (Loading....) | Create Account
Close category search window
 

Deposition of silicon nitride by low-pressure electron cyclotron resonance plasma enhanced chemical vapor deposition in N2/Ar/SiH4

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Moshkalyov, S.A. ; UNICAMP, IFGW, DEQ, CEP 13083-970 Campinas, S.P., Brazil ; Diniz, J.A. ; Swart, J.W. ; Tatsch, P.J.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.589708 

Plasma deposition of silicon nitride on silicon substrates in a microwave electron cyclotron resonance N2/Ar/SiH4 discharge was studied as a function of gas pressure (1–5 mTorr), gas composition, and discharge power (250–1000 W). The dependencies of deposition parameters on discharge characteristics obtained at 1 mTorr appear to be essentially different from those at higher pressures. Optical emission spectroscopy was used for plasma characterization. A high degree of ionization and dissociation of gas molecules was observed under present plasma conditions. It is shown that the contribution of ionized species to film deposition is comparable with that of neutral ones under high power and low pressure conditions. The best quality of films was obtained at a moderate rather than the highest available dissociation degree of silane. © 1997 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:15 ,  Issue: 6 )

Date of Publication:

Nov 1997

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.