By Topic

Towards 280 nm i-line random logic lithography with off-axis illumination and optical proximity correction

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Grodnensky, I. ; Nikon Precision, Incorporated, Belmont, California ; Watson, G.P. ; Garofalo, J. ; Castro, D.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

The feasibility of imaging 280 nm features for random logic using i-line technology is examined. Theoretical and experimental studies are carried out to evaluate the effects of subresolution assist lines on the printing of an isolated 280 nm line. Optical proximity effect bias corrections for the 280 nm gaps were investigated as well. Simulations and experiments are conducted to study the exposure field nonuniformity and to evaluate the capability of modern i-line high numerical aperture (NA) exposure tools for 280 nm patterning. It is found that for NA=0.63, independent of illumination conditions, the optimum position and width of assist lines are in the range of 260–320 and 140–160 nm, respectively. The 2/3 annular off-axis illumination shows good performance and provides a greater than 1.6 μm depth of focus (DOF) for the assisted 280 nm isolated line. For the 280 nm gap, with the appropriate mask correction features (“hammerheads”), the 2/3 annular illumination also offers more than 1 μm DOF. The image uniformity studies show that the level of variations of the spatial partial coherence factor σ and the coma aberration in modern tools have practically no effect on the across field linewidth variation (AFLV) under the 2/3 annular condition. For the isolated 280 nm assisted line, an AFLV as small as 10 nm was observed over a 17×17 mm2 exposure field. © 1997 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:15 ,  Issue: 6 )