Atomic force microscopy studies of Hg_1-xCd_xTe thin films grown by isothermal vapor phase epitaxy

Atomic force microscopy measurements have been performed in order to study mercury cadmium telluride thin films grown on hybrid substrates by means of a new method based on an isothermal vapor phase epitaxy process (iso-VPE). The morphology of the samples, grown both on sapphire and on silicon 2 in. substrates, was observed at the different steps of the iso-VPE process. In the case of the silicon substrate the absence of interdiffusion with the deposited film was detected by means of a cross sectional atomic force microscopy analysis of the sample. Moreover, the surface quality of the iso-VPE grown thin films has been found to be comparable with that of samples grown on hybrid substrates by means of conventional techniques like liquid phase epitaxy. Fourier-transform infrared measurements were also performed in order to prove the high optical goodness of the samples. © 1997 American Vacuum Society.