Patterning of Langmuir–Blodgett film with ultrahigh vacuum-scanning tunneling microscope/atomic force microscope

We performed a patterning of a stearic acid Langmuir–Blodgett (LB) film on a Si substrate with ultrahigh vacuum scanning probe microscope. The patterning was carried out with a conducting Si cantilever probe by applying positive or negative bias voltages to the sample. When a negative bias (-10 V) was applied, one monolayer of the LB film was extracted. On the other hand, when a positive sample bias (+10 V) was applied, the scanned area was protruded. This extraction mechanism is explained in terms of the force caused by permanent and induced dipole moments. Further, SiO₂ was selectively deposited on the patterned area using SiCl₄ and H₂O. © 1997 American Vacuum Society.