By Topic

Raman monitoring of molecular beam epitaxial growth of GaN on GaAs (100) and Si (111)

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
3 Author(s)
Drews, D. ; Professur für Halbleiterphysik der TU Chemnitz-Zwickau, D-09107 Chemnitz, Germany ; Schneider, A. ; Zahn, D.R.T.

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Epitaxial layers of GaN were grown by molecular beam epitaxy on GaAs (100) and Si (111) substrates. Nitrogen was provided from a rf-plasma source while elemental Ga was evaporated from a Knudsen cell. The growth process was performed in an ultrahigh vacuum chamber that is optically aligned with a multichannel Raman spectrometer. This setup allows Raman spectra to be taken online, i.e., during the growth process. Utilizing resonant Raman scattering conditions, spectra with a sufficient signal-to-noise ratio were taken even at the growth temperature of 600 °C. For both substrates the evolution of compressive strain at the interface was monitored from the frequency shift of the substrate phonons in the initial phase of the growth process. © 1997 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:15 ,  Issue: 4 )