Cart (Loading....) | Create Account
Close category search window
 

Etching of high aspect ratio microcavity structures in InP

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Ying, F. ; Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, Michigan 48109-2122 ; Juan, W.H. ; Pang, S.W.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.589366 

Etching of InP using an electron cyclotron resonance source in a Cl2/Ar plasma has been investigated for the fabrication of microcavity laser structures. Fast, smooth, and reproducible etching was achieved with etch rates of 2.14 μm/min. It was found that the etch profile depended on the Cl2 concentration in the Cl2/Ar plasma. Vertical etch profile was obtained for Cl2 concentration 15%. Hard-baked photoresist and Ni have been used as etch masks. Typical etch rate of hard-baked photoresist was 0.10 μm/min and etch selectivity between InP and photoresist was 21. Typical etch rate of Ni was 13 nm/min with a selectivity of 165. The etched InP surface was smoother for samples with photoresist mask. For samples with Ni mask, the etched surface became rougher when narrower or deeper trenches were etched. With optimized etch conditions, high aspect ratio microstructures in InP that were 0.75 μm wide and 10.7 μm tall were fabricated with nearly vertical profile and smooth etched surface using photoresist mask. Similarly, arrays of microcavities of 1 μm in diameter and 4.5 μm tall have been formed. © 1997 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:15 ,  Issue: 3 )

Date of Publication:

May 1997

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.