By Topic

Highly anisotropic silicon reactive ion etching for nanofabrication using mixtures of SF6/CHF3 gases

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Grigoropoulos, S. ; Institute of Microelectronics, NCSR “Demokritos,” Post Office Box 60228, Aghia Paraskevi, Attiki 15310, Greece ; Gogolides, E. ; Tserepi, A.D. ; Nassiopoulos, A.G.

Your organization might have access to this article on the publisher's site. To check, click on this link: 

A novel highly anisotropic room-temperature process for silicon etching, using mixtures of SF6 and CHF3 gases is presented. The etch rate, selectivity, dc bias voltage and anisotropy as a function of the reactive ion etching conditions (mixture composition, pressure and rf power) are discussed. Excellent anisotropy combined with clean, damage-free surfaces and etching uniformity and reproducibility have been achieved. It was thus possible to fabricate free standing silicon wires with diameter less than 50 nm and with aspect ratios up to 50:1. Optical emission spectroscopy, ex situ x-ray photoelectron spectroscopy and atomic force microscopy were employed as plasma gas phase and surface diagnostics. © 1997 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:15 ,  Issue: 3 )