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I–V characteristics of modified silicon surface using scanning probe microscopy

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4 Author(s)
Yasue, Takao ; ULSI R&D Laboratory, Mitsubishi Electric Corporation, 4-1 Mizuhara, Itami, Hyogo 664, Japan ; Koyama, Hiroshi ; Kato, Tadao ; Nishioka, Tadashi

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Using scanning probe microscopy, we have modified a silicon surface and measured its current–voltage (I–V) characteristics. In the modified area, both an increase in film thickness and a decrease in current caused by field-induced oxidation (FIO) have been observed. The I–V characteristics of the FIO film shows a good fit to a Fowler–Nordheim (FN) tunneling current model. The barrier height determined by a FN plot shows a good agreement with that of conventional metal–oxide–semiconductor structure with thermal thick silicon oxide. © 1997 American Vacuum Society.

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Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:15 ,  Issue: 3 )