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Surface morphologies associated with thermal desorption: Scanning tunneling microscopy studies of Br–GaAs(110)

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5 Author(s)
Cha, C.Y. ; Department of Materials Science and Chemical Engineering, University of Minnesota, Minneapolis, Minnesota 55455 ; Brake, J. ; Han, B.Y. ; Owens, D.W.
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Scanning tunneling microscopy was used to characterize the developing surface morphology found during typical temperature programmed desorption experiments for halogen–GaAs. Surfaces exposed to Br2 at 300 K were heated to temperatures between 450 and 675 K, followed by scanning at room temperature. This made it possible to relate the temperature-dependent gas phase etch product distribution to the surface structure and thereby examine atomic-level surface processes associated with the evolution of volatile products. We associate the desorption of GaBr3 around 500 K with the initiation of single-layer-deep terrace pits. Desorption of GaBr and As2 above 600 K accounts for the lateral enlargement of the pits. © 1997 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:15 ,  Issue: 3 )

Date of Publication:

May 1997

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