By Topic

Molecular beam epitaxy of highly mismatched In0.73Ga0.27As on InP for near-infrared photodetectors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Kochhar, R. ; Department of Electrical Engineering, Electronic Materials and Processing Research Laboratory, The Pennsylvania State University, University Park, Pennsylvania 16802 ; Hwang, W.Y. ; Micovic, M. ; Mayer, T.S.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.589313 

We demonstrate that high-quality lattice-mismatched In0.73Ga0.27As:InP photodetectors for use at 2.2 μm can be grown by molecular beam epitaxy using compositionally graded buffer layers. By investigating various growth conditions, we found that the quality of the active layer material depends on the thickness of the compositionally graded buffer layers and the substrate temperature during the growth of the compositionally graded buffer layers and active layers. The best device performance was obtained from a sample with a 1.0 μm compositionally graded buffer grown at a substrate temperature of 350 °C combined with active layers grown at 400 °C. The typical room temperature dark current at a reverse bias of 1 V for 100×100 μm2 photodetectors on this sample was 2 mA/cm2. This dark current is a factor of 10 better than that of commercially available devices fabricated from material grown using vapor phase epitaxy. © 1997 American Vacuum Society.  

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:15 ,  Issue: 2 )