By Topic

X‐ray mask fabrication technology for 0.1 μm very large scale integrated circuits

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Oda, M. ; NTT LSI Laboratories, 3‐1, Morinosato Wakamiya, Atsugi, Kanagawa 243‐01, Japan ; Uchiyama, S. ; Watanabe, T. ; Komatsu, K.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.589055 

X‐ray mask fabrication using a subtractive process and a 30 kV acceleration voltage electron beam writer was investigated. The dose margin for delineation of fine resist patterns is increased by reducing the resist thickness. Delineation of 0.1 μm patterns in a 0.1‐μm‐thick resist has approximately the same dose margin as that of 0.2 μm patterns in a 0.3‐μm‐thick resist. Width error in SiO2 patterns used as an etching mask is decreased by reducing the thickness and adding SF6 to CF4 etching gas. Tantalum absorbers can be etched very accurately with electron cyclotron resonance ion stream etching by taking microloading effects and undercutting into account. Using the 0.1‐μm‐thick resist, x‐ray masks with 0.1 μm large scale integrated circuit patterns are almost perfectly produced and have a critical dimension accuracy of 13 nm. © 1996 American Vacuum Society

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:14 ,  Issue: 6 )