Cart (Loading....) | Create Account
Close category search window

Dry etching of horizontal distributed Bragg reflector mirrors for waveguide lasers

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Thomas, S., III ; Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, Michigan 48109‐2122 ; Pang, S.W.

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Distributed Bragg reflector mirrors were etched in InP and GaAs. The mirrors were patterned using electron‐beam lithography and etched with an electron cyclotron resonance source. This fabrication technique has the advantage that no regrowth step is required and the length of the passive mirror region is confined to a few micrometers. The structure requires etching vertical profiles with smooth surface morphology and high selectivity to the masking material. The effects of rf power, Cl2 percentage in Ar, chamber pressure, and stage temperature were studied. Increasing the rf power from 100 to 250 W caused the InP selectivity to Ni to decrease from 147 to 55. A similar effect was observed for etching GaAs. For both InP and GaAs, a vertical profile can be obtained by reducing the Cl2 percentage in Ar and by using low chamber pressure of 1 mTorr. Increasing the Cl2 percentage, however, improves selectivity to the Ni mask. With 20% Cl2 in Ar, vertical profiles and high selectivities are obtained for both InP and GaAs. Using high temperature increases the volatility of InClx etch products and improves the selectivity of InP to Ni. For InGaAsP/InP waveguide lasers, 122 nm wide mirrors were etched in InP to a depth of 2.0 μm for maximum reflectivity at 1.55 μm. For AlGaAs/GaAs waveguide lasers, 59 nm wide mirrors were etched in GaAs to a depth of 1.5 μm. Etching of nλ/4 mirrors, where λ is the emission wavelength, was studied and the dependence of gap spacing on etch depth was measured. The variations in etch depth for different gaps were minimized by reducing the pressure. © 1996 American Vacuum Society

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:14 ,  Issue: 6 )

Date of Publication:

Nov 1996

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.