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Quantum confined Stark effect near 1.5 μm wavelength in InAs0.53P0.47/GayIn1-yP strain‐balanced quantum wells

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5 Author(s)
Mei, X.B. ; Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92093‐0407 ; Bi, W.G. ; Tu, C.W. ; Chou, L.J.
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We report that high‐quality InAsP/GaInP strain‐balanced multiple quantum wells (MQWs) at 1.5 μm wavelength can be grown by gas‐source molecular beam epitaxy. In order to obtain a large quantum‐confined Stark effect, relatively thick (∼100 Å) InAs0.53P0.47 layers (lattice mismatch 1.8%) have been grown without strain relaxation. Our theoretical calculation shows that, while fulfilling the strain balance condition, the GaInP barriers should have a large thickness and small strain to reduce strain relaxation in these layers. Large Stark shift (32 meV at 180 kV/cm field) has been observed in a p‐i‐n diode structure with 20‐period InAs0.53P0.47/Ga0.16In0.84P MQWs as the intrinsic region. The large change of absorption coefficient under electric field (∼3800 cm-1 at 80 kV/cm) indicates that this material is very promising for optical modulators near 1.5 μm. © 1996 American Vacuum Society

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Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:14 ,  Issue: 3 )