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Two‐dimensional dopant profiling of very large scale integrated devices using selective etching and atomic force microscopy

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5 Author(s)
Barrett, M. ; Advanced Micro Devices, Inc., Austin, Texas 78741Department of Physics, University of Texas at Austin, Austin, Texas 78712 ; Dennis, M. ; Tiffin, D. ; Li, Y.
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We report a detailed mapping of a two‐dimensional dopant profile on a fully processed industrial sample with large dynamic range and high spatial resolution by utilizing a dopant‐selective etching process and atomic force microscopy. The experimental profiling results show excellent agreement with those obtained from spreading resistance probe and secondary ion mass spectroscopy as corroborative methods. We also discuss the most critical factors which influence the applicability, reproducibility, and reliability of this dopant selective etching method. © 1996 American Vacuum Society

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Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:14 ,  Issue: 1 )