By Topic

Atomistic Full-Band Design Study of InAs Band-to-Band Tunneling Field-Effect Transistors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Luisier, M. ; Network for Comput. Nanotechnol., Purdue Univ., WestLafayette, IN ; Klimeck, G.

Band-to-band tunneling field-effect transistors (BTBT FETs) are expected to exhibit a subthreshold swing (SS) better than the 60-mV/dec limit of conventional metal-oxide-semiconductor FETs at room temperature. Through atomistic modeling of a suite of realistically extended InAs p-i-n single-gate (SG) and dual-gate (DG) ultrathin-body (UTB) and gate-all-around nanowire (GAA NW) devices with a gate length of 20 nm, we demonstrate that such a reduced SS can only be achieved if the electrostatic potential under the gate contact is very well controlled. We find that GAA NWs keep an SS less than 60 mV/dec for diameters larger than 10 nm, while the bodies in DG and SG UTBs must be scaled down to 7 and 4 nm, respectively. Still, all the considered devices are characterized by an on current smaller than the ITRS requirements.

Published in:

Electron Device Letters, IEEE  (Volume:30 ,  Issue: 6 )