Poly-Silicon Based Latching RF MEMS Switch

A latching RF MEMS switch has been fabricated in a multi-user polysilicon surface micromachining process. The switch uses 5 V, 35 mA thermal actuation for < 500 mus to toggle between states and a compliant bistable latching mechanism to hold the state in the absence of applied bias. The switch, including probe pads, measures 1 mm
²
and has <0.4 dB insertion loss, >25 dB return loss, and >75 dB isolation at 1 GHz. The switch has potential applications in low duty-cycle, low power RF tuning and switching applications.