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To realize a technology for x‐ray nanolithography (≪100 nm features), which is compatible with manufacturing, a number of mask design requirements must be met that are unrelated to patterning, repair, and alignment. These include high‐flatness membranes and support structures so that mask‐wafer gaps less than 10 μm can be achieved without risk of damage, and a rigid mask frame to avoid problems of distortion during handling. The membrane material should be compatible with semiconductor‐processing, possess high strength, be radiation hard, and be transparent to light for alignment purposes. Details of a mask architecture that meets these requirements will be described.
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures (Volume:9 , Issue: 6 )
Date of Publication: Nov 1991