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High‐quality Schottky diodes have been fabricated by depositing several metals onto atomically clean molecular‐beam epitaxy grown surfaces of GaAs(100) displaying (4×6) and c(4×4) reconstructed forms. Diodes have been made at temperatures of 80, 200, and 300 K and the barrier heights investigated by the current‐voltage method at these temperatures and following temperature cycles. In all cases investigated, the Schottky barrier heights are large and similar to those for the same metals on GaAs (110) surfaces. These results are in complete contrast with those recently reported where soft x‐ray photoemission and internal photoemission data for metals on GaAs (100) surfaces were interpreted in terms of the Schottky model.