By Topic

Schottky barrier heights for GaAs diodes fabricated at low temperatures

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Wilks, S.P. ; Physics Department, University of Wales, College of Cardiff, P.O. Box 913, Cardiff CF1 3TH, Wales ; Morris, J.I. ; Woolf, D.A. ; Williams, R.H.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.585749 

High‐quality Schottky diodes have been fabricated by depositing several metals onto atomically clean molecular‐beam epitaxy grown surfaces of GaAs(100) displaying (4×6) and c(4×4) reconstructed forms. Diodes have been made at temperatures of 80, 200, and 300 K and the barrier heights investigated by the current‐voltage method at these temperatures and following temperature cycles. In all cases investigated, the Schottky barrier heights are large and similar to those for the same metals on GaAs (110) surfaces. These results are in complete contrast with those recently reported where soft x‐ray photoemission and internal photoemission data for metals on GaAs (100) surfaces were interpreted in terms of the Schottky model.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:9 ,  Issue: 4 )