Cart (Loading....) | Create Account
Close category search window

Alkane based plasma etching of GaAs

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Law, V.J. ; Cavendish Laboratory, Madingley Road, Cambridge CB3 OHE, United Kingdom ; Tewordt, M. ; Ingram, S.G. ; Jones, G.A.C.

Your organization might have access to this article on the publisher's site. To check, click on this link: 

A mechanistic model for the plasma etching of GaAs is compared with experimentally determined kinetic reaction rates and thermodynamic data. The measurements were made on etching characteristics of radio frequency (rf) and electron cyclotron resonance (ECR) plasmas in alkane (CH4, C2H6, and C3H8 ), hydrogen and noble gas mixtures. The model examines the reaction mechanisms on the substrate surface in terms of sequential adsorption and fragmentation of the precursor alkane molecules and the subsequent desorption of volatile reaction products. Experimental results show GaAs etch rates in rf plasmas to be proportional to the initial alkane concentration, and the order of reaction increases with the number of constituent CHx groups within the alkane precursor molecule. By using different noble gas admixtures it has been possible to determine their effect on etch rates with respect to pure hydrogen admixtures, where results show that etch rates scale with the substitution of He≪H2≪Ar admixtures in CH4 plasmas. GaAs etch rates in ECR/magnetic mirror coupled plasmas show that GaAs etch rates are lower than in rf plasmas, with evidence of enhanced positive photoresist degradation at high microwave powers, and H2 partial pressures.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:9 ,  Issue: 3 )

Date of Publication:

May 1991

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.