By Topic

The relation between lift‐off of photoresist and the surface coverage of trimethylsiloxy groups on silicon wafers: A quantitative time‐of‐flight secondary ion mass spectrometry and contact angle study

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Ponjee, J.J. ; Philips Research Laboratories, P. O. Box 80.000, 5600 JA, Eindhoven, The Netherlands ; Marriott, V.B. ; Michielsen, M.C.B.A. ; Touwslager, F.J.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

In this paper the interaction between a trimethylsilylated silicon substrate and diazonaphthoquinone–novolak photoresist material has been examined. Time‐of‐flight secondary ion mass spectrometry (TOF SIMS) and contact angle measurements of water have been used to determine the surface coverage of trimethylsiloxy (TMS) groups on cleaned and subsequently treated silicon wafers. A linear relation is obtained between the relative surface coverage as measured by TOF SIMS and the cosine value of the contact angle. The surface coverage of the TMS groups has to exceed a value of about 50% of a monomolecular layer to assure the absence of lift‐off of photoresist. Contrary to the common belief that trimethylsilylation of silicon substrates improves the adhesion between photoresist and the silicon substrate, it rather deteriorates the adhesion. This is further corroborated by experiments on silica particles. It is proposed that the low‐surface energy of the trimethylsilylated surface prevents the penetration of the alkaline developer solution into the interface of the silicon substrate and the photoresist material.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:8 ,  Issue: 3 )