Cart (Loading....) | Create Account
Close category search window

Fabrication and characterization of Si‐coupled superconducting field effect transistors with 0.1 μm gate

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Hatano, Mutsuko ; Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo, Japan ; Murai, Fumio ; Nishino, T. ; Hasegawa, H.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

A 0.1‐μm‐gate‐length superconducting field effect transistor (FET) with a coplanar structure is realized by a self‐aligned fabrication process using electron beam lithography. A T‐shaped gate structure with an insulated sidewall makes it possible to form the spacing between the superconducting source and drain electrodes to be ≪0.15 μm without causing an electrical short. The characteristics of this FET measured at 4.2 K indicate that the superconducting current and normal‐state resistance can be successfully controlled by the applied gate bias.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:7 ,  Issue: 6 )

Date of Publication:

Nov 1989

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.