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A 0.1‐μm‐gate‐length superconducting field effect transistor (FET) with a coplanar structure is realized by a self‐aligned fabrication process using electron beam lithography. A T‐shaped gate structure with an insulated sidewall makes it possible to form the spacing between the superconducting source and drain electrodes to be ≪0.15 μm without causing an electrical short. The characteristics of this FET measured at 4.2 K indicate that the superconducting current and normal‐state resistance can be successfully controlled by the applied gate bias.