By Topic

Kinetic aspects of growth front surface morphology and defect formation during molecular‐beam epitaxy growth of strained thin films

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
2 Author(s)
Ghaisas, S.V. ; Department of Materials Science and Engineering and Department of Physics University of Southern California, Los Angeles, California 90089‐0241 ; Madhukar, A.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.584730 

The influence of lattice mismatch induced strain on the growth mode, surface morphology, and kinetically controlled introduction of defects at the earliest stages of molecular‐beam epitaxical growth of semiconducting compounds is investigated via computer simulations. A variety of combinations of the possible ways in which compressive or tensile in‐plane strain may modify the atomistic kinetic rates involved in growth have been considered and their consequences compared with the available experimental information. A few illustrative examples relevant to systems such as InGaAs/GaAs(100), InGa(Al)As/InP(100), and GaAs/Si are presented.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:7 ,  Issue: 2 )