By Topic

Polymer deposition and etching mechanisms in C2F6 radio‐frequency plasma as studied by laser‐induced fluorescence

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
3 Author(s)
Kitamura, Mamoru ; NTT Electrical Communications Laboratories, 3‐1, Morinosato Wakamiya, Atsugi‐Shi, Kanagawa 243‐01, Japan ; Akiya, Hideo ; Urisu, Tsuneo

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.584438 

Spatial profiles of CF2 concentration in C2 F6 rf plasma are measured by the laser‐induced fluorescence method. The observed profiles are explained by the generation and recombination reaction mechanisms of CF2 . It is found that the deposition rate of fluorocarbon polymer on SiO2 film is proportional to [CF2]n ; n=2.5–3.0, whereas the etch rate of SiO2 is proportional to [CF2]. Both the etching and the deposition reactions proceed at the same time. Based on these observations, reaction mechanisms for fluorocarbon polymer deposition and SiO2 etching are analyzed.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:7 ,  Issue: 1 )