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Silicon dioxide fine patterning by reactive fast atom beam etching

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2 Author(s)
Kuwano, Hiroki ; NTT Applied Electronics Laboratories, Nippon Telegraph and Telephone Corporation, 3‐9‐11, Midori‐cho, Musashino‐shi, Tokyo, 180 Japan ; Shimokawa, Fusao

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A fast atom beam technique is applied to silicon dioxide substrate pattern fabrication. A modified Mcllraith (saddle field) fast atom source having a charge exchange cell in front of the cathode grid is studied under several discharge conditions. High pressure in the source is shown to increase the proportion of high‐energy neutral particles in the beam. The tendencies of the neutralizations are in accordance with calculations based on resonance charge transfer. Maximum etch rates for Si and SiO2 using a CF4 +O2 gas mixture are achieved at a relative CF4 gas flow rate of 0.76, and the etch rate for SiO2, unlike that for Si, is found to depend linearly on the discharge current. The etched sidewalls at a discharge voltage of 1.2 kV were nearly perpendicular. Reactive fast atom beam etching proved capable of producing highly accurate 0.2‐μm‐wide pattern formations.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:6 ,  Issue: 5 )

Date of Publication:

Sep 1988

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