Cart (Loading....) | Create Account
Close category search window
 

Silicon dioxide fine patterning by reactive fast atom beam etching

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Kuwano, Hiroki ; NTT Applied Electronics Laboratories, Nippon Telegraph and Telephone Corporation, 3‐9‐11, Midori‐cho, Musashino‐shi, Tokyo, 180 Japan ; Shimokawa, Fusao

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.584215 

A fast atom beam technique is applied to silicon dioxide substrate pattern fabrication. A modified Mcllraith (saddle field) fast atom source having a charge exchange cell in front of the cathode grid is studied under several discharge conditions. High pressure in the source is shown to increase the proportion of high‐energy neutral particles in the beam. The tendencies of the neutralizations are in accordance with calculations based on resonance charge transfer. Maximum etch rates for Si and SiO2 using a CF4 +O2 gas mixture are achieved at a relative CF4 gas flow rate of 0.76, and the etch rate for SiO2, unlike that for Si, is found to depend linearly on the discharge current. The etched sidewalls at a discharge voltage of 1.2 kV were nearly perpendicular. Reactive fast atom beam etching proved capable of producing highly accurate 0.2‐μm‐wide pattern formations.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:6 ,  Issue: 5 )

Date of Publication:

Sep 1988

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.