Cart (Loading....) | Create Account
Close category search window

Wide range of Schottky barrier height for metal contacts to GaAs controlled by Si interface layers

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Waldrop, J.R. ; Rockwell International Science Center, Thousand Oaks, California 91360 ; Grant, R.W.

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Metal (Au, Cr, and Ti) contacts to n‐type (100) GaAs are described in which the Schottky barrier height ϕB is controlled by using a very thin Si interface layer to influence the interface Fermi energy EiF. The contact structure consists of a thick metal and an ∼15–30 Å Si interface layer that is heavily either p‐type or n‐type. A large 1 eV ϕB is found for the metal–Si(p‐type)–GaAs structure and a small 0.5 eV ϕB for the metal–Si(n‐type)–GaAs structure. X‐ray photoemission spectroscopy (XPS) was used to obtain EiF and interface composition during initial contact formation; the ϕB for the thick contacts was measured by I–V and C–V techniques.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:6 ,  Issue: 4 )

Date of Publication:

Jul 1988

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.