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Wide range of Schottky barrier height for metal contacts to GaAs controlled by Si interface layers

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2 Author(s)
Waldrop, J.R. ; Rockwell International Science Center, Thousand Oaks, California 91360 ; Grant, R.W.

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Metal (Au, Cr, and Ti) contacts to n‐type (100) GaAs are described in which the Schottky barrier height ϕB is controlled by using a very thin Si interface layer to influence the interface Fermi energy EiF. The contact structure consists of a thick metal and an ∼15–30 Å Si interface layer that is heavily either p‐type or n‐type. A large 1 eV ϕB is found for the metal–Si(p‐type)–GaAs structure and a small 0.5 eV ϕB for the metal–Si(n‐type)–GaAs structure. X‐ray photoemission spectroscopy (XPS) was used to obtain EiF and interface composition during initial contact formation; the ϕB for the thick contacts was measured by I–V and C–V techniques.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:6 ,  Issue: 4 )

Date of Publication:

Jul 1988

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