Cart (Loading....) | Create Account
Close category search window

Growth of high quality GaAs layers directly on Si substrate by molecular‐beam epitaxy

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Chong, Tow C. ; Department of Electrical Engineering and Computer Science and Center for Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 ; Fonstad, C.G.

Your organization might have access to this article on the publisher's site. To check, click on this link: 

A study of molecular‐beam epitaxy growth conditions that lead to high quality GaAs epitaxial layers grown directly on (100) Si substrates without the use of superlattice buffers is reported. An initial nucleation process which involves a predeposition of As on the Si surface and an in situ thermal annealing step immediately after the initial growth is shown to yield high quality GaAs layers with only a thin buffer layer. The effect of the growth initiation temperature is investigated and an optimal value for this temperature is found that results in smooth GaAs surface morphology. GaAs layers with relatively thin buffer layers grown under optimum conditions exhibit considerably improved electrical and optical properties, with Hall mobility and photoluminescence linewidth similar to those of homoepitaxial GaAs layers.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:5 ,  Issue: 3 )

Date of Publication:

May 1987

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.