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Auger and Rutherford backscattering compositional analysis of GaInAs anodic oxide

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2 Author(s)
Shanker, Kartik ; Guelph–Waterloo Program for Graduate Work in Physics, University of Guelph Campus, Guelph, Ontario, Canada N1G 2W1 ; Fischer, C.W.

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Anodic oxidation of III–V semiconductors provides excellent control of oxide thickness and high chemical etch selectivity. Rutherford backscattering spectrometry (RBS) and Auger electron spectroscopy (AES) were used to characterize the oxides grown on GaInAs. Epilayer compositions with the Ga mole fraction ranging from 0.43 to 0.56 were used. The oxides were found to have uniform composition throughout their thickness, except when anodic growth was done using an electrolyte with tartaric acid buffered by NH4OH to a pH of 7.0. Under high pH (∼7) conditions, anodization was associated with nonuniform In or O concentrations. Compositional analysis of the AES sputter depth data was accomplished by using appropriate sensitivity factors, obtained from standards and by RBS measurement of the In/(Ga+As) ratios. RBS ratios were invaluable since there was strong correlation between the In concentration and its sensitivity factor, ranging (exponentially) from ∼0.75 at 6% In to ∼0.6 at 8% In. All the oxides had near stoichiometric O content but were In deficient, irrespective of the epilayer composition or the anodization conditions.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:5 ,  Issue: 3 )

Date of Publication:

May 1987

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