Cart (Loading....) | Create Account
Close category search window
 

Auger and Rutherford backscattering compositional analysis of GaInAs anodic oxide

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Shanker, Kartik ; Guelph–Waterloo Program for Graduate Work in Physics, University of Guelph Campus, Guelph, Ontario, Canada N1G 2W1 ; Fischer, C.W.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.583794 

Anodic oxidation of III–V semiconductors provides excellent control of oxide thickness and high chemical etch selectivity. Rutherford backscattering spectrometry (RBS) and Auger electron spectroscopy (AES) were used to characterize the oxides grown on GaInAs. Epilayer compositions with the Ga mole fraction ranging from 0.43 to 0.56 were used. The oxides were found to have uniform composition throughout their thickness, except when anodic growth was done using an electrolyte with tartaric acid buffered by NH4OH to a pH of 7.0. Under high pH (∼7) conditions, anodization was associated with nonuniform In or O concentrations. Compositional analysis of the AES sputter depth data was accomplished by using appropriate sensitivity factors, obtained from standards and by RBS measurement of the In/(Ga+As) ratios. RBS ratios were invaluable since there was strong correlation between the In concentration and its sensitivity factor, ranging (exponentially) from ∼0.75 at 6% In to ∼0.6 at 8% In. All the oxides had near stoichiometric O content but were In deficient, irrespective of the epilayer composition or the anodization conditions.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:5 ,  Issue: 3 )

Date of Publication:

May 1987

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.