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Damage to resist structures during scanning electron microscope inspection

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1 Author(s)
Erasmus, S.J. ; Hewlett–Packard Laboratories, Palo Alto, California 94304

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In order to obtain a high resolution scanning electron microscope (SEM) image of a resist pattern, it is necessary to use a relatively large electron dose, but many resists change in size and shape when irradiated. The dimensional stability of several common resists as a function of electron dose and electron energy has been investigated. An optimum dose, which is a compromise between resolution and radiation damage can be chosen. It is shown that the optimum dose should be used when inspecting radiation sensitive materials, because a micrograph taken at too high a dose will be distorted, but may not exhibit obvious signs of damage.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:5 ,  Issue: 1 )

Date of Publication:

Jan 1987

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