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Effects of ion beam irradiation on electrical properties of Langmuir-Blodgett (LB) films

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5 Author(s)
J. Kyokane ; Nara Nat. Coll. of Technol., Japan ; M. Yoshimizu ; I. Taniguchi ; Y. Aoki
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An RF (3-heptafluoropropyle) thiophene oligomer and a TCNQ complex with different molar ratios of the donor and acceptor were prepared as conductive materials by the Langmuir-Blodgett (LB) technique. A method utilizing ion beam irradiation for improving the quality and stability of the LB films was also proposed

Published in:

Electrical Insulating Materials, 1995. International Symposium on

Date of Conference:

17-20 Sep 1995